Level U Shaped Npn Photoelectric Sensor

Availability:

Quantity:



Inquire Add to Basket

Product Description

Photodetectors may be classified by their mechanism for detection:

· Photoemission or photoelectric effect: Photons cause electrons to transition from the conduction band of a material to free electrons in a vacuum or gas.

· Thermal: Photons cause electrons to transition to mid-gap states then decay back to lower bands, inducing phonon generation and thus heat.

· Polarization: Photons induce changes in polarization states of suitable materials, which may lead to change in index of refraction or other polarization effects.

· Photochemical: Photons induce a chemical change in a material.

Structural category Photoelectric switch
Outward Appearance code				G63
Outward appearance illustration
Overall dimensions
Overall dimensions
Diffuse Type	DETECTION DISTANCE
		NPN	NO
	DC		NC
	10		NO+NC
	～	PNP	NO
	30		NC
	V		NO+NC
	AC 90-250VAC	SCR Controllable silicon	NO
		SCR Controllable silicon	NC
		Relay output
Retro reflictive	DETECTION DISTANCE
		NPN	NO
	DC		NC
	10		NO+NC
	～	PNP	NO
	30		NC
	V		NO+NC
	AC 90-250VAC	SCR Controllable silicon	NO
		SCR Controllable silicon	NC
		Relay output
Trough beam	DETECTION DISTANCE			3m
		NPN	NO	G63-3E03NA
	DC		NC	G63-3E03NB
	10		NO+NC	G63-3E03NC
	～	PNP	NO	G63-3E03PA
	30		NC	G63-3E03PB
	V		NO+NC	G63-3E03PC
	AC 90-250VAC	SCR Controllable silicon	NO
		SCR Controllable silicon	NC
		Relay output
DC/SCR/Relay Control output				DC:200mA 、AC:300mA relay:2A
DC/AC Consumption current				DC<15mA AC<10mA
DC/AC Response time				DC<2ms AC<20ms
Directional angle				3°–10°
Detected object				transparent of opaque body
Working environment temperature				–25℃～55℃
Intensity of illumination of working environment				Sunlight under 10000LX incandescent lamp under 3000LX
Shell material				Metal,Plastic
Protection grade				IP54